刘大猛，男，清华大学机械工程系助理研究员。

2004.9 - 2009.7 剑桥大学电子工程学专业博士

2001.9 - 2004.7 北京大学凝聚态物理专业硕士

1997.9 - 2001.7 北京大学物理学院学士

2009.11 – 至今，清华大学机械工程系摩擦学国家重点实验室，助研

原子尺度固体润滑材料物性研究

过度金属氮化物硬质涂层研究

近年来先后承担或参与金属氮化物、氧化物薄膜材料、微纳加工工艺、表面图案制备工艺、激光在表面技术中的应用等相关课题近十项。

主要承担和参与的项目有《基于电场诱导的核酸混合自组装分子膜属性控制研究》，《基于脉冲激光诱导微细电火花的表面纳米加工方法和原理研究》，《纳尺度下生物溶液的纳流变行为研究》，《超精加工用高性能硬质合金刀具表面改性技术》等研究课题。

共发表SCI期刊论文十余篇，参加国际学术会议多次。

1.D.Liu, H.Wang, K.Su, Q.Tan, B.Bai, and T.Shao, “Laser Induced Twin-Groove Surface Texturing, Based on Optical Fiber Modulation”，Laser Physics，23, (056005),2013

2.D.Liu, J.Liu, H.Wang, and T.Shao , “Laser Etching of Groove Structures with Micro-Optical Fiber Enhanced Irradiation”,Nanoscale Research Letters. 7,(318) 2012

3.J.C.Liu, D.M.Liu, and T.M. Shao,“FDTD simulation on laser-induced enhancement of electric field in the near-field apertureless probe system”，Laser Physics Letters，1–8 ，（201210012）2012.

4.D.Liu, S.J.Clark, J.Robertson, “Oxygen vacancy levels and electron transport in Al2O3”,Applied Physics Letters，96,(032905) 2010.

5.KY.Tse, D.Liu, J.Robertson, “Electronic and atomic structure of metal-HfO2 interfaces”, PHYSICAL REVIEW B, 81,(035325) 2010.

6.D.Liu, J.Robertson, “Oxygen vacancy levels and interfaces of Al2O3” Microelectronic Engineering,86(1668) 2009.

7.D. Liu, J.Robertson, “Passivation of oxygen vacancy states and suppression of Fermi pinning in HfO2 by La addition” Applied Physics Letters，94,(042904) 2009.

8.L. Fonseca, D. Liu, J. Robertson, “P-type Fermi level pinning at a Si:Al2O3 model interface” Applied Physics Letters, 93, (122905) 2008.

9.K.Xiong, P.Delugas, J.C.Hooker, V.Fiorentini, J.Robertson, D.Liu, G.Pourtois,“Te-induced modulation of the Mo/HfO2 interface effective work function” Applied Physics Letters, 92, (113504) 2008.

10.K. Tse, D. Liu, J, Robertson.“Oxygen vacancies in high-k oxides” Microelectronic Engineering 84 (2028) 2007.

11.D. Liu, K.Tse, J, Robertson.“Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7” Applied Physics Letters, 90 (062901) 2007.

12.D.Liu, G.Lian, G.Xiong,“The n-Type metal-semiconductor In/Nb-SrTiO3 schottky barrier diodes” Chinese Journal of Low Temperature Physics, 26 (04) 2004.